Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein

ABSTRACT

CMOS integrated circuit devices include an electrically insulating layer and an unstrained silicon active layer on the electrically insulating layer. An insulated gate electrode is also provided on a surface of the unstrained silicon active layer. A Si 1-x Ge x  layer is also disposed between the electrically insulating layer and the unstrained silicon active layer. The Si 1-x Ge x  layer forms a first junction with the unstrained silicon active layer and has a graded concentration of Ge therein that decreases monotonically in a first direction extending from a peak level towards the surface of the unstrained silicon active layer. The peak Ge concentration level is greater than x=0.15 and the concentration of Ge in the Si 1-x Ge x  layer varies from the peak level to a level less than about x=0.1 at the first junction. The concentration of Ge at the first junction may be abrupt. More preferably, the concentration of Ge in the Si 1-x Ge x  layer varies from the peak level where 0.2&lt;x&lt;0.4 to a level where x=0 at the first junction. The Si 1-x Ge x  layer also has a retrograded arsenic doping profile therein relative to the surface. This retrograded profile may result in the Si 1-x Ge x  layer having a greater concentration of first conductivity type dopants therein relative to the concentration of first conductivity type dopants in a channel region within the unstrained silicon active layer. The total amount of dopants in the channel region and underlying Si 1-x Ge x  layer can also be carefully controlled to achieve a desired threshold voltage.

RELATED APPLICATIONS

This application is a divisional of and claims priority to applicationSer. No. 09/711,706, filed Nov. 13, 2000 now U.S. Pat. No. 6,633,066which claimed priority to Korean Patent Application No. 2000-670, filedJan. 7, 2000 and is related to Ser. No. 10/685,116; filed Oct. 14, 2003,the disclosures of which are hereby incorporated herein by reference intheir entireties.

FIELD OF THE INVENTION

The present invention relates to semiconductor devices and fabricationmethods, and more particularly, to MOS-based semiconductor devices andsubstrates and methods of forming same.

BACKGROUND

Partially-depleted silicon-on-insulator (PDSOI) MOSFETs offer high speedand low power performance, but typically remain susceptible to parasiticfloating body effects (FBE) which can seriously degrade deviceperformance. Various techniques have been proposed for reducing FBE inSOI MOSFETs. One such technique includes using a narrow bandgap SiGelayer adjacent a source of an SOI NMOS field effect transistor. As willbe understood by those skilled in the art, the use of a SiGe layerreduces the potential barrier for holes passing from the body region tothe source region. Therefore, holes generated in the body region byimpact ionization can more readily flow into the source region throughthe path of the p-Si(body)/n+SiGe(source)/n+Si(source). This and otherrelated techniques are disclosed in articles by J. Sim et al. entitled“Elimination of Parasitic Bipolar-Induced Breakdown Effects inUltra-Thin SOI MOSFETs Using Narrow-Bandgap-Source (NBS) Structure,”IEEE Trans. Elec. Dev., Vol. 42, No. 8, pp. 1495–1502, August (1995) andM. Yoshimi et al. entitled “Suppression of the Floating-Body Effect inSOI MOSFETs by the Bandgap Engineering Method Using a Si_(1-x)Ge_(x)Source Structure,” IEEE Trans. Elec. Dev., Vol. 44, No. 3, pp. 423–429,March (1997). U.S. Pat. No. 5,698,869 to Yoshimi et al. entitled“Insulated-Gate Transistor Having Narrow-Bandgap-Source” also disclosesthe use of a narrow bandgap material within a source region of a MOSFET.

Techniques to reduce FBE and improve channel characteristics in MOSFETsare also described in U.S. Pat. No. 5,891,769 to Liaw et al. entitled“Method for Forming a Semiconductor Device Having a HeteroepitaxialLayer.” In particular, the '769 patent discloses the use of a strainedchannel region to enhance carrier mobility within MOSFETs. This strainedchannel region may be formed by growing a silicon layer on an as-grownrelaxed or unstrained SiGe layer. U.S. Pat. No. 5,963,817 to Chu et al.entitled “Bulk and Strained Silicon on Insulator Using SelectiveOxidation,” also discloses the use of SiGe layers, which selectivelyoxidize at faster rates relative to silicon, to improve FBE.Furthermore, U.S. Pat. Nos. 5,906,951 and 6,059,895 to Chu et al.disclose wafer bonding techniques and strained SiGe layers to provideSOI substrates. The use of wafer bonding techniques and SiGe layers toprovide SOI substrates are also described in U.S. Pat. Nos. 5,218,213and 5,240,876 to Gaul et al. Conventional techniques for forming SOIsubstrates are also illustrated by FIGS. 1A–1D and 2A–2D. In particular,FIG. 1A illustrates the formation of a handling substrate having aporous silicon layer therein and an epitaxial silicon layer thereon andFIG. 1B illustrates the bonding of a supporting substrate to a surfaceof the epitaxial silicon layer. The supporting substrate may include anoxide layer thereon which is bonded directly to the epitaxial siliconlayer using conventional techniques. As illustrated by FIG. 1C, aportion of the handling substrate is then removed to expose the poroussilicon layer. This removal step may be performed by grinding or etchingaway a portion of the handling substrate or splitting the porous siliconlayer. As illustrated by FIG. 1D, a conventional planarization techniquemay then be performed to remove the porous silicon layer and provide anSOI substrate having a polished silicon layer thereon and a buried oxidelayer therein. The conventional technique illustrated by FIGS. 1A–1D iscommonly referred to as an epi-layer transfer (ELTRAN) technique. FIG.2A illustrates a step of forming a handling substrate having a siliconlayer thereon by implanting hydrogen ions into a surface of thesubstrate to define a buried hydrogen implant layer therein. Then, asillustrated by FIG. 2B, a supporting substrate is bonded to the handlingsubstrate. A portion of the handling substrate is then removed bysplitting the bonded substrate along the hydrogen implant layer, asillustrated by FIG. 2C. A conventional planarization technique may thenbe performed to remove the hydrogen implant layer, as illustrated byFIG. 2D. The conventional technique illustrated by FIGS. 2A–2D iscommonly referred to as a “smart-cut” technique.

Unfortunately, although the use of strained silicon channel regions mayenhance carrier mobility in both NMOS and PMOS devices, such strainedregions typically degrade short channel device characteristics: Thus,notwithstanding the above-described techniques for forming MOSFETs andSOI substrates, there continues to be a need for improved methods offorming these structures that do not require the use of strained channelregions to obtain enhanced channel mobility characteristics, andstructures formed thereby.

SUMMARY

Embodiments of the present invention include semiconductor-on-insulator(SOI) substrates having buried Si_(1-x)Ge_(x) layers therein. A SOIsubstrate according to one embodiment of the present invention comprisesa silicon wafer having an electrically insulating layer thereon and aSi_(1-x)Ge_(x) layer having a graded concentration of Ge thereinextending on the electrically insulating layer. An unstrained siliconactive layer is also provided in the SOI substrate. This unstrainedsilicon active layer extends on the Si_(1-x)Ge_(x) layer and forms ajunction therewith. The unstrained silicon active layer also preferablyextends to a surface of the SOI substrate, so that integrated circuitdevices may be formed at the surface of the silicon active layer. Tofacilitate the use of relatively thin silicon active layers, theSi_(1-x)Ge_(x) layer is preferably epitaxially grown from the unstrainedsilicon active layer. This epitaxial growth step may include providingan unstrained silicon active layer (or initially epitaxially growing anunstrained silicon active layer on a substrate) and then continuinggrowth of a Si_(1-x)Ge_(x) layer on the active layer by increasing theconcentration of Ge in a graded manner until a maximum desired Geconcentration is obtained. Further growth may then occur by reducing theconcentration of Ge in a graded manner back to x=0. The grading of Ge inthe Si_(1-x)Ge_(x) layer may constitute a linear grading.

The preferred SOI substrates may be fabricated by initially forming ahandling substrate having an unstrained silicon layer therein and aSi_(1-x)Ge_(x) layer extending on the silicon layer. A supportingsubstrate is then bonded to the handing substrate so that theSi_(1-x)Ge_(x) layer is disposed between the supporting substrate andthe unstrained silicon layer. A portion of the handling substrate isthen preferably removed from the supporting substrate to expose asurface of the silicon layer and define a semiconductor-on-insulatorsubstrate having a buried Si_(1-x)Ge_(x) layer therein. Here, the buriedSi_(1-x)Ge_(x) layer preferably has a graded concentration of Ge thereinwith a profile that decreases in a direction that extends from thesupporting substrate to the surface of the silicon layer.

These methods may also include forming a handling substrate having anunstrained first silicon layer therein, a Si_(1-x)Ge_(x) layer extendingon the first silicon layer and an unstrained or strained second siliconlayer extending on the Si_(1-x)Ge_(x) layer. The bonding step may alsobe preceded by the step of thermally oxidizing the second silicon layerto define a thermal oxide layer on the Si_(1-x)Ge_(x). The supportingsubstrate may also comprise an oxide surface layer thereon and thebonding step may comprise bonding the oxide surface layer to the thermaloxide layer. Alternatively, the bonding step may be preceded by the stepof depositing an electrically insulating layer on the Si_(1-x)Ge_(x)layer and the bonding step may comprise bonding the oxide surface layerto the electrically insulating layer.

According to still another preferred method of forming a SOI substrate,the handling substrate may comprise a porous silicon layer therein andthe removing step may comprise removing a portion of the handlingsubstrate from the supporting substrate by splitting the porous siliconlayer and then planarizing the porous silicon layer and the siliconlayer in sequence. Preferred methods of forming handling substrates mayalso comprise epitaxially growing a Si_(1-x)Ge_(x) layer on a siliconlayer and then implanting hydrogen ions through the Si_(1-x)Ge_(x) layerand the silicon layer to define a hydrogen implant layer in the handlingsubstrate. The removing step may then be performed by splitting thehydrogen implant layer and then planarizing the hydrogen implant layerto expose a surface of the silicon layer. Semiconductor devices,including field effect transistors, may then be formed at this surfaceof the silicon layer.

An additional embodiment of the present invention includessemiconductor-on-insulator field effect transistors. Such transistorsmay comprise an electrically insulating layer and an unstrained siliconactive layer on the electrically insulating layer. An insulated gateelectrode is also provided on a surface of the unstrained silicon activelayer. A Si_(1-x)Ge_(x) layer is also disposed between the electricallyinsulating layer and the unstrained silicon active layer. TheSi_(1-x)Ge_(x) layer forms a first junction with the unstrained siliconactive layer and has a graded concentration of Ge therein that decreasesmonotonically in a first direction extending from a peak level towardsthe surface of the unstrained silicon active layer. According to oneaspect of this embodiment, the peak Ge concentration level is greaterthan x=0.15 and the concentration of Ge in the Si_(1-x)Ge_(x) layervaries from the peak level to a level less than about x=0.1 at the firstjunction. The concentration of Ge at the first junction may be abrupt.More preferably, the concentration of Ge in the Si_(1-x)Ge_(x) layervaries from the peak level where 0.2<x<0.4 to a level where x=0 at thefirst junction.

The Si_(1-x)Ge_(x) layer may also define an interface with theunderlying electrically insulating layer and the graded concentration ofGe in the Si_(1-x)Ge_(x) layer may increase from a level less than aboutx=0.1 at the interface with the electrically insulating layer to thepeak level. The unstrained silicon active layer may also have athickness of greater than about 600 Å and the Si_(1-x)Ge_(x) layer mayhave a thickness of less than about 800 Å.

Higher drive current capability in PMOS transistors may also be achievedby reorganizing the dopant profiles in the channel region and in thebody region. In particular, the different solubility of certain dopantsin Si and Si_(1-x)Ge_(x) can be used advantageously to improve PMOSdevice characteristics. In a preferred PMOS transistor, theSi_(1-x)Ge_(x) layer is doped with an N-type dopant and theconcentration of the N-type dopant in the Si_(1-x)Ge_(x) layer has aprofile that decreases in the first direction towards the surface of theunstrained silicon active layer. This profile preferably has a peaklevel within the Si_(1-x)Ge_(x) layer and may decrease in the firstdirection and in a monotonic manner so that a continuously retrogradedN-type dopant profile extends across the unstrained silicon activelayer. This N-type dopant is preferably used to suppress punch-throughin the body region, but may also be used to influence the thresholdvoltage of the PMOS transistor.

Additional semiconductor-on-insulator field effect transistors may alsocomprise an electrically insulating layer and a composite semiconductoractive region on the electrically insulating layer. This compositesemiconductor active region comprises a silicon active layer having athickness greater than about 600□ and a single Si_(1-x)Ge_(x) layerdisposed between the electrically insulating layer and the siliconactive layer. The Si_(1-x)Ge_(x) layer forms a first junction with thesilicon active layer and has a graded concentration of Ge therein thatdecreases monotonically in a first direction extending from a peak leveltowards a surface of the silicon active layer. An insulated gateelectrode is also provided on the surface. The peak level of Ge in theSi_(1-x)Ge_(x) layer is preferably greater than x=0.15 and theconcentration of Ge in the Si_(1-x)Ge_(x) layer varies from the peaklevel to a level less than about x=0.1 at the first junction. Morepreferably, the concentration of Ge in the Si_(1-x)Ge_(x) layer variesfrom the peak level where 0.2<x<0.4 to a level where x=0 at the firstjunction. The Si_(1-x)Ge_(x) layer may also define an interface with theelectrically insulating layer and the graded concentration of Ge in theSi_(1-x)Ge_(x) layer also increases from a level less than about x=0.1at the interface to the peak level.

A further embodiment of the present invention comprises a PMOS fieldeffect transistor having a composite semiconductor active region thereinthat extends on an electrically insulating layer. This compositesemiconductor active region comprises a single Si_(1-x)Ge_(x) layerhaving a graded concentration of Ge therein that decreases monotonicallyin a first direction extending from a peak level within the singleSi_(1-x)Ge_(x) layer towards a surface thereof. An unstrained siliconactive layer is also provided that extends from a first junction withthe single Si_(1-x)Ge_(x) layer to the surface. The compositesemiconductor active region also has an at least substantiallyretrograded N-type dopant profile therein that extends to the surfaceand has a peak level in the single Si_(1-x)Ge_(x) layer. The totalcharge provided by this N-type dopant influences the threshold voltageof the PMOS transistor. The N-type dopant in the single Si_(1-x)Ge_(x)layer also significantly inhibits punch-through caused by depletionlayers that may extend between the source and drain regions. Lightlydoped P-type source and drain regions are also preferably provided.These regions extend in the silicon active layer and opposite theinsulated gate electrode. A source-side pocket implant region of N-typeconductivity is also provided and this pocket implant region extendsbetween the lightly doped P-type source region and the singleSi_(1-x)Ge_(x) layer. This pocket implant region forms rectifying andnonrectifying junctions with the source region and the singleSi_(1-x)Ge_(x) layer, respectively, and operates to suppress junctionleakage.

A still further embodiment of a semiconductor-on-insulator field effecttransistor comprises a bulk silicon region and an electricallyinsulating layer on the bulk silicon region. Anunstrained silicon activelayer having a first thickness is also provided on the electricallyinsulating layer and an insulated gate electrode with sidewallinsulating spacers is formed on a surface of the unstrained siliconactive layer. A Si_(1-x)Ge_(x) layer of first conductivity type isdisposed between the electrically insulating layer and the unstrainedsilicon active layer. In particular, the Si_(1-x)Ge_(x) layer forms afirst junction with the unstrained silicon active layer and has a gradedconcentration of Ge therein that decreases monotonically in a firstdirection extending from a peak level towards the surface. Lightly dopedsource and drain regions of second conductivity type are also provided.These lightly doped regions extend in the unstrained silicon activelayer, but to a depth less than the thickness of the unstrained siliconactive layer. In addition, a source-side pocket implant region of firstconductivity type is provided in the unstrained silicon active layer,and this source-side pocket implant region extends between the lightlydoped source region and the Si_(1-x)Ge_(x) layer. According to apreferred aspect of this embodiment, the Si_(1-x)Ge_(x) layer has aretrograded first conductivity type doping profile therein relative tothe surface. This retrograded first conductivity type doping profile maybe a retrograded arsenic (or arsenic/phosphorus) doping profile and mayresult in the Si_(1-x)Ge_(x) layer having a greater concentration offirst conductivity type dopants therein relative to the maximumconcentration of first conductivity type dopants in a channel regionwithin the unstrained silicon active layer. In particular, theretrograded dopant profile has a peak in the Si_(1-x)Ge_(x) layer and aminimum underneath the gate electrode. This retrograded profilepreferably decreases monotonically from the peak level to the minimumlevel, however, other retrograded profiles may also be achieved. Thethickness of the unstrained silicon active layer and the total amount ofdopants in the channel region and underlying Si_(1-x)Ge_(x) layer canalso be carefully controlled to achieve a desired threshold voltage andinhibit punch-through.

Embodiments of the present inventions also include methods of formingfield effect transistors by forming an insulated gate electrode on asurface of a semiconductor-on-insulator substrate. This substrateincludes an electrically insulating layer, an unstrained silicon activelayer on the electrically insulating layer and a Si_(1-x)Ge_(x)epitaxial layer having a graded concentration of Ge therein disposedbetween the electrically insulating layer and the unstrained siliconactive layer. Steps are also performed to form source and drain regionsof first conductivity type in the unstrained silicon active layer andalso form source-side and drain-side pocket implant regions of secondconductivity type that extend in the unstrained silicon active layer andin the Si_(1-x)Ge_(x) epitaxial layer. These pocket implant regions formrespective P—N junctions with the source and drain regions. The step offorming an insulated gate electrode is preferably preceded by the stepof implanting threshold voltage control dopants of first conductivitytype into the unstrained silicon active layer. These threshold voltagecontrol dopants may then be annealed and redistributed as a result ofdifferent dopant solubility in Si and Si_(1-x)Ge_(x), after theinsulated gate electrode has been formed, to establish a retrogradedprofile of threshold voltage control dopants in the Si_(1-x)Ge_(x)epitaxial layer and silicon active layer. The dopants in theSi_(1-x)Ge_(x) epitaxial layer also inhibit punch-through in PMOSdevices and reduce floating body effects in NMOS devices.

The substrates and forming methods of the present invention can beutilized to form NMOS transistors having reduced floating body effects(FBE). The reduction in FBE occurs because the buried SiGe layer, havinga graded Ge concentration therein, reduces the potential barrier forholes passing from the body region to the source region. Therefore,holes generated in the body region by impact ionization can more readilyflow into the source region through the path of thep-Si(body)/p-SiGe(body)/n+SiGe(source)/n+Si(source). NMOS transistorshaving well controlled kink effect characteristics and Id v. Vg curveshaving evenly distributed subthreshold slope with respect to Vds canalso be formed. The substrates and forming methods of the presentinvention can also be utilized to provide PMOS transistors havingexcellent drive capability resulting from higher inversion-layer carriermobility in the channel regions. This improved drive capability isachieved by reorganizing the channel region dopants through annealing sothat a retrograded dopant profile and a desired threshold voltage aresimultaneously achieved. This reorganization of the channel regiondopants can also be used to enhance pocket ion implantation efficiency.The threshold voltage roll-off characteristics of these NMOS and PMOSdevices can also demonstrate reduced short channel effects (RSCE), andthe suppressed parasitic bipolar action (PBA) in the devices can be usedto reduce off-leakage current.

BRIEF DESCRIPTION OF THE DRAWINGS

The above objectives and advantages of the present invention will becomemore apparent by describing in detail a preferred embodiment thereofwith reference to the attached drawings in which:

FIGS. 1A–1D are cross-sectional views of intermediate structures thatillustrate conventional methods of forming semiconductor-on-insulator(SOI) substrates.

FIGS. 2A–2D are cross-sectional views of intermediate structures thatillustrate conventional methods of forming SOI substrates.

FIGS. 3A–3E are cross-sectional views of intermediate structures thatillustrate methods of forming SOI substrates having SiGe layers thereinaccording to an embodiment of the present invention.

FIGS. 4A–4E are cross-sectional views of intermediate structures thatillustrate methods of forming SOI substrates having SiGe layers thereinaccording to an embodiment of the present invention.

FIG. 5 is a flow-diagram of process steps that illustrates preferredmethods of forming SOI-based field effect transistors according to anembodiment of the present invention.

FIGS. 6A–6E are cross-sectional views of intermediate structures thatillustrate methods of forming SOI-based MOS transistors according to anembodiment of the present invention.

FIG. 7A is a graph of N-type dopant concentration versus substrate depthfor a conventional SOI substrate prior to anneal. The illustratedphosphorus and arsenic dopants were implanted at energies of 30 KeV and200 KeV, respectively.

FIG. 7B is a graph of N-type dopant concentration versus substrate depthfor a conventional SOI substrate after anneal. The pre-anneal dopantprofiles are illustrated by FIG. 7A.

FIG. 7C is a graph of N-type dopant concentration versus substrate depthfor a preferred SOI substrate having a SiGe layer inserted therein. Theillustrated phosphorus and arsenic dopants were implanted at energies of30 KeV and 200 KeV, respectively.

FIG. 7D is a graph of N-type dopant concentration versus substrate depthfor a preferred SOI substrate having a SiGe layer inserted therein,after anneal. The pre-anneal dopant profiles are illustrated by FIG. 7C.

DESCRIPTION OF EMBODIMENTS ACCORDING TO EMBODIMENTS OF THE INVENTION

The present invention will now be described more fully hereinafter withreference to the accompanying drawings, in which preferred embodimentsof the invention are shown. This invention may, however, be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. In thedrawings, the thickness of layers and regions are exaggerated forclarity. It will also be understood that when a layer is referred to asbeing “on” another layer or substrate, it can be directly on the otherlayer or substrate, or intervening layers may also be present. Moreover,the terms “first conductivity type” and “second conductivity type” referto opposite conductivity types such as N or P-type, however, eachembodiment described and illustrated herein includes its complementaryembodiment as well. Like numbers refer to like elements throughout.

Referring now to FIGS. 3A–3E, preferred methods of formingsemiconductor-on-insulator (SOI) substrates having Si_(1-x)Ge_(x) layerstherein will be described. As illustrated by FIG. 3A, an illustratedmethod includes forming a handling substrate 10 having a porous siliconlayer 12 therein and a first epitaxial silicon layer 14 (Si-epi)extending on the porous silicon layer 12. This first epitaxial siliconlayer 14 may have a thickness of greater than about 600 Å. Asillustrated by FIG. 3B, a Si_(1-x)Ge_(x) layer 16 is then formed on thefirst epitaxial silicon layer 14. This Si_(1-x)Ge_(x) layer 16 may havea thickness of less than about 800 Å and may be formed using a lowpressure chemical vapor deposition technique (LPCVD) that is performedat a temperature in a range between about 700° C. and 1300° C. Thisdeposition step may be performed by exposing a surface of the firstepitaxial silicon layer 14 to a deposition gas comprising a mixture ofGeH₄ and SiH₂Cl₂ source gases. In particular, the deposition step ispreferably performed by varying the relative concentration of thegermanium source gas (e.g., GeH₄) in-situ. For example, the flow rate ofthe germanium source gas is preferably varied so that the concentrationof Ge within the Si_(1-x)Ge_(x) layer 16 is increased from a value ofx=0.0 at the junction with the underlying first epitaxial silicon layer14 to a maximum value of 0.2×0.4 therein. After the maximumconcentration level is reached, the flow rate of the germanium sourcegas may be gradually reduced until the concentration of Ge in theSi_(1-x)Ge_(x) layer 16 is reduced to zero.

Referring still to FIG. 3B, a second epitaxial silicon layer 18 may thenbe formed on the Si_(1-x)Ge_(x) layer 16 by continuing the depositionstep using a source gas of SiH₂Cl₂ at a temperature of about 850° C.This step of forming a second epitaxial silicon layer 18 is optional.

Referring now to FIG. 3C, a supporting substrate 20 is then preferablybonded to the second epitaxial silicon layer 18. As illustrated, thisbonding step is preferably performed between an oxide layer 22 residingon the supporting substrate 20 and a polished surface of the secondepitaxial silicon layer 18. The oxide layer 22 may have a thickness in arange between about 800–3000 Å. Then, as illustrated by FIG. 3D, thehandling substrate 10 is removed from the composite substrate bysplitting the composite substrate along the porous silicon layer 12.Conventional techniques may then be used to remove remaining portions ofthe porous silicon layer 12 from the composite substrate. As illustratedby FIG. 3E, this removal step may comprise removing the porous siliconlayer 12 using a planarization or polishing technique that exposes aprimary surface 14 a of the first epitaxial silicon layer 14. Asdescribed more fully hereinbelow, active devices (e.g., CMOS devices)having preferred electrical characteristics may be formed in the first“unstrained” epitaxial silicon layer 14.

FIGS. 4A–4E illustrate alternative methods of formingsemiconductor-on-insulator (SOI) substrates having Si_(1-xGe) _(x)layers therein. As illustrated by FIG. 4A, an illustrated methodincludes forming a handling substrate 10′ having a Si_(1-x)Ge_(x) layer16′ thereon and a second epitaxial silicon layer 18′ on theSi_(1-x)Ge_(x) layer 16′. The Si_(1-x)Ge_(x) layer 16′ may be formed asdescribed above with respect to FIG. 3B. A blanket implantation step isthen performed, as illustrated by FIG. 4B. This implantation step mayinclude implanting hydrogen ions through the second epitaxial siliconlayer 18′ and into the handling substrate 10′, to define a hydrogenimplant layer 15. The hydrogen ions are preferably implanted at asufficient energy level to define a first silicon layer 14′ between thehydrogen implant layer 15 and the Si_(1-x)Ge_(x) layer 16′. For example,the hydrogen ions may be implanted at a dose level of 1×10¹⁶–1×10¹⁷ cm⁻²and at an energy level of about 150–400 KeV. Referring now to FIG. 4C, asupporting substrate 20 is then preferably bonded to the secondepitaxial silicon layer 18′. As illustrated, this bonding step ispreferably performed between an oxide layer 22 residing on thesupporting substrate 20 and a polished surface of the second epitaxialsilicon layer 18′. Then, as illustrated by FIG. 4D, the handlingsubstrate 10′ is removed from the composite substrate by splitting thecomposite substrate along the hydrogen implant layer 15. Conventionaltechniques may then be used to remove remaining portions of the hydrogenimplant layer 15 from the composite substrate.

As illustrated by FIG. 4E, this removal step may comprise removing thehydrogen implant layer 15 using a planarization or polishing techniquethat exposes a primary surface of the first silicon layer 14′. Accordingto still further embodiments of the present invention, the secondepitaxial silicon layer 18 of FIG. 3C and the second epitaxial siliconlayer 18′ of FIG. 4C may be thermally oxidized before the bonding stepis performed. Alternatively, prior to the bonding step, an electricallyinsulating layer may be deposited on the second epitaxial silicon layers18 and 18′, or on the Si_(1-x)Ge_(x) layers 16 and 16′ in the event thesecond epitaxial silicon layers 18 and 18′ are not present. Thethickness of the Si_(1-x)Ge_(x) layers 16 and 16′ may also be increasedin the event these layers are partially thermally oxidized inpreparation for the bonding step. The thicknesses of the secondepitaxial silicon layers 18 and 18′ may be set at levels in a rangebetween about 200–400 Å.

Alternatively, the Si_(1-x)Ge_(x) layers 16 and 16′ may be formed aslayers having a graded concentration of Ge therein that reaches amaximum level of about 30 percent. These layers may be formed at atemperature in a range between 700° C.–800° C. and at a pressure ofabout 20 Torr. The source gases may include GeH₄, (0–60 sccm), DCS(SiH₂Cl₂) at 200 sccm and HCl at 50–100 sccm.

Referring now to FIG. 5, preferred methods 100 of forming field effecttransistors (e.g., MOSFETs) in SOI substrates will be described. Asdescribed above with respect to FIGS. 3A–3E and 4A–4E, these methodsinclude forming an SOI substrate having an unstrained silicon activelayer and a buried Si_(1-x)Ge_(x) layer therein, Block 102. The buriedSi_(1-x)Ge_(x) layer is preferably epitaxially grown from the unstrainedsilicon active layer while the concentration of Ge therein is increasedfrom a level where initially x=0 to a peak level where 0.2×0.4. Thus,the concentration of Ge in the buried Si_(1-x)Ge_(x) layer has a profilethat preferably decreases in a direction extending from a peak leveltherein towards a primary surface of the unstrained silicon active layer(i.e., upper surface of the SOI substrate). Dopants for adjustingthreshold voltage are then implanted into the substrate, Block 104. The“threshold voltage” dopants used in NMOS and PMOS transistors may beseparately implanted into the substrate using respective NMOS and PMOSimplant masks. For NMOS transistors, the threshold voltage dopantstypically comprise P-type dopants such as boron (B) and indium (In).However, for PMOS transistors, the threshold voltage dopants typicallycomprise N-type dopants such as arsenic (As) and phosphorus (P).

The steps of implanting threshold voltage dopants may include implantingmultiple different dopants of same conductivity type. For example, inPMOS devices, both As and P dopants may be implanted as thresholdvoltage dopants at respective energy levels and dose levels. Thesemultiple dopants may have different dopant solubilities within siliconand silicon germanium and these different solubilities may be usedadvantageously to achieve a preferred redistribution of the thresholdvoltage dopants when subsequent thermal annealing steps are performed.This preferred redistribution may result in a retrograded profile of thethreshold voltage dopants. In particular, the preferred redistributionof dopants may improve the inversion-layer channel characteristics ofthe resulting transistors by inhibiting a reduction in channel mobilitythat typically occurs when threshold voltage dopants are introduced intothe channel regions of the transistors. This is particularlyadvantageous for PMOS devices which typically suffer from relatively lowhole mobility in the inversion-layer channel. The thickness of thesilicon active layer and underlying Si_(1-x)Ge_(x) layer may also bedesigned to enhance the degree of preferred redistribution of thethreshold voltage dopants while simultaneously insuring that the totaldopant charge influences the resulting threshold voltage. The dopantsused to influence threshold voltage in PMOS devices may also be usedadvantageously to inhibit punch-through.

Referring now to Block 106, an insulated gate electrode may then beformed on the substrate using conventional techniques. As illustrated byBlock 108, this insulated gate electrode is then used as a mask duringthe implantation of lightly doped source (LDS) and lightly doped drain(LDD) dopants into the unstrained silicon active layer. Pocket implantregions may then be formed by implanting pocket region dopants into theunstrained silicon active layer and underlying Si_(1-x)Ge_(x) layer,Block 110. These pocket region dopants are preferably implanted at asufficient dose level and energy level to result in the formation ofpocket implant regions that extend between the LDS and LDD regions andthe underlying Si_(1-x)Ge_(x) layer. As illustrated by Block 112,conventional techniques may then be used to define electricallyinsulating spacers on the sidewalls of the gate electrode. Highly dopedsource and drain region dopants may then be implanted into and throughthe LDS and LDD regions, using the gate electrode and sidewallinsulating spacers as an implant mask, Block 114. As illustrated byBlock 116, a rapid thermal annealing (RTA) step may then be performed todrive-in the source and drain region dopants. During this annealingstep, previously implanted dopants may also be diffused andredistributed within the silicon active layer and underlyingSi_(1-x)Ge_(x) layer.

Referring now to FIGS. 6A–6E, preferred methods of forming SOI fieldeffect transistors include forming a substrate having an unstrainedsilicon active layer 36 thereon and a buried Si_(1-x)Ge_(x) layer 34therein. As illustrated by FIG. 6A, the unstrained silicon active layer36 may have a thickness of greater than about 600 Å and the buriedSi_(1-x)Ge_(x) layer 34 may have a thickness of less than about 800 Å.Preferably, the unstrained silicon active layer 36 may have a thicknessin a range between about 800 Å and 1200 Å and the buried Si_(1-x)Ge_(x)layer 34 may have a thickness in a range between about 200 Å and 600 Å.More preferably, the unstrained silicon active layer 36 may have athickness of 1000 Å and the buried Si_(1-x)Ge_(x) layer 34 may have athickness of 400 Å. A relatively thin underlying layer 32 of strained orunstrained silicon having a thickness of about 300 Å may also beprovided between the buried Si_(1-x)Ge_(x) layer 34 and a buried oxidelayer 30. This underlying layer 32 may be omitted. The concentration ofGe in the buried Si_(1-x)Ge_(x) layer 34 may be set to zero at thejunction with the silicon active layer 36 and the underlying layer 32.The concentration of Ge in the buried Si_(1-x)Ge_(x) layer 34 may alsobe set at a peak level in a range between 0.2 and 0.4 and may belinearly graded relative to the peak level. The buried oxide layer 30may be provided on a semiconductor substrate or wafer (not shown).

Referring now to FIG. 6B, threshold voltage control dopants 38 are thenimplanted into the unstrained silicon active layer 36. In the event bothNMOS and PMOS devices are to be formed at adjacent locations within thesilicon active layer 36, then separate NMOS and PMOS implantation masks(not shown) may be formed on the unstrained silicon active layer 36.These masks may be used when N-type dopants are implanted as thresholdvoltage control dopants for PMOS devices and when P-type dopants areimplanted as threshold voltage control dopants for NMOS devices. Theimplanted dopants 38 may include boron (B) and indium (In) when formingNMOS devices and arsenic (As) and phosphorus (P) when forming PMOSdevices. Other dopants may also be used. In particular, the illustratedimplanting step may comprise two separate implant steps. First,threshold voltage control dopants such as BF₂ ions may be implanted atan energy level in a range between about 30–60 KeV, at a dose level in arange between about 8×10¹¹ cm⁻² and 5×10¹³ cm⁻² and at a tilt angle of0°. Second, threshold voltage control dopants such as indium ions mayalso be implanted at a higher energy level in a range between about150–250 KeV and at a dose level in a range between about 8×10¹¹ cm⁻² and5×10¹³ cm⁻². When forming PMOS devices, the illustrated implanting stepmay comprise separately implanting arsenic and phosphorous ions atsufficient dose and energy levels to achieve a desired retrogradeddopant profile within the channel region and body region within thesilicon active layer 36 and the underlying Si_(1-x)Ge_(x) layer 34. Inparticular, the first implant step may comprise implanting P ions at anenergy level in a range between about 20–40 KeV, at a dose level in arange between about 8×10¹¹ cm⁻² and 5×10¹³ cm⁻² and at a tilt angle of7°. Arsenic ions may then be implanted at a higher energy level in arange between about 150–250 KeV and at a dose level in a range betweenabout 8×10¹¹ cm⁻² and 5×10¹³ cm⁻². The arsenic ions may influencethreshold voltage, but typically have a much stronger influence ondevice characteristics by inhibiting punch-through in the body region ofthe PMOS device.

Referring now to FIG. 6C, conventional techniques may then be used todefine an insulated gate electrode on the primary surface of the siliconactive layer 36. These techniques may include forming a thermal oxidelayer 42 on the primary surface and depositing a doped or undopedpolysilicon layer 40 on the thermal oxide layer 42. Conventionaltechniques may then be used to pattern the polysilicon layer and thermaloxide layer into an insulated gate electrode having exposed sidewalls.Techniques for forming insulated gate electrodes are more fullydescribed in commonly assigned U.S. Pat. No. 6,6064,092 to Park,entitled “Semiconductor-On-Insulator Substrates Containing ElectricallyInsulating Mesas”; U.S. Pat. No. 5,998,840 to Kim, entitled“Semiconductor-On-Insulator Field Effect Transistors With ReducedFloating Body Parasitics”; and U.S. Pat. No. 5,877,046 to Yu et al.,entitled “Methods of Forming Semiconductor-on-Insulator Substrates”, thedisclosures of which are hereby incorporated herein by reference. Firstsource and drain region dopants 39 may then be implanted into thesilicon active layer 36 to define lightly doped source (LDS) and drain(LDD) regions 44 a and 44 b. As illustrated, these dopants may implantedin a self-aligned manner using the insulated gate electrode as animplant mask. For a PMOS device, boron dopants (e.g., BF₂ ions) may beimplanted at an energy level in a range between about 3–30 KeV and at adose level in a range between about 1×10¹² cm⁻² and 1×10¹⁶ cm⁻².Alternatively, for an NMOS device, arsenic dopants may be implanted atan energy level in a range between about 20–50 KeV and at a dose levelin a range between about 1×10¹² cm⁻² and 1×10¹⁶ cm⁻². A relatively shortduration annealing step may then be performed to laterally andvertically diffuse the LDD and LDS dopants. Other dopants may also beused when forming the LDS and LDD regions.

Referring now to FIG. 6D, pocket implant region dopants 46 may then beimplanted at a tilt angle in a range between about 7 and 35 degrees, todefine P-type pocket implant regions 48 a–b within an NMOS device orN-type pocket implant regions 48 a–b within a PMOS device. This implantstep is preferably performed at a sufficient energy level and dose levelto penetrate beneath the LDD and LDS regions 44 a and 44 b and into theburied Si_(1-x)Ge_(x) layer 34. In particular, the N-type pocket implantregions 48 a–b may be formed by implanting arsenic ions at an energylevel in a range between about 100 and 300 KeV and at a dose level in arange between about 1×10¹² cm⁻² and 1×10¹⁵ cm⁻². The P-type pocketimplant regions 48 a–b may also be formed by implanting boron ions at anenergy level in a range between about 20 and 60 KeV and at a dose levelin a range between about 1×10¹² cm⁻² and 1×10¹⁵ cm⁻².

Highly doped N-type source and drain regions 50 a and 50 b may then beformed by implanting arsenic ions 52 at an energy level in a rangebetween about 20–60 KeV and at a dose level in a range between about5×10¹⁴ cm⁻² and 1×10¹⁷ cm⁻². Alternatively, for a PMOS device, thehighly doped P-type source and drain regions 50 a and 50 b may be formedby implanting BF₂ ions 52 at an energy level in a range between about25–40 KeV and at a dose level in a range between about 1×10¹⁴ cm⁻²and5×10¹⁶ cm⁻². A drive-in and activation step may then be performed byannealing the substrate using a rapid thermal annealing technique. Theannealing step may be performed at a temperature in a range between 900°C. and 1050° C., for a duration in a range between 10–200 seconds.

Referring now to FIGS. 7A–7D, pre-anneal and post-anneal profiles ofN-type dopants in conventional SOI substrates and SOI substrates havingSiGe layers inserted therein will be described. In particular, FIG. 7Aillustrates doping profiles for phosphorus (P) and arsenic (As) in aconventional SOI substrate having a buried oxide layer (BOX) extendingtherein between a silicon active layer (top Si) and a silicon wafer (notshown). The illustrated phosphorus and arsenic dopants were implanted atenergies of 30 KeV and 200 KeV, respectively. As illustrated by FIG. 7B,after performing a rapid thermal anneal (RTA) at a temperature of about1000° C. and a duration of about 30 seconds, the originalgaussian-shaped doping profiles spread out and give rise tosubstantially uniform profiles. In contrast, the doping profilesillustrated by FIGS. 7C and 7C show that a retrograded As profile can beachieved in a SOI substrate having a buried Si_(1-x)Ge_(x) layer thereinformed in accordance with methods of the present invention. Thisretrograded profile is achieved, in part, by doping the buriedSi_(1-x)Ge_(x) layer with a sufficient concentration of Ge tosubstantially increase the dopant solubility of arsenic in theSi_(1-x)Ge_(x) layer relative to the silicon active layer. Inparticular, FIG. 7C illustrates pre-anneal phosphorus and arsenicprofiles (phosphorus and arsenic dopants were implanted at energies of30 KeV and 200 KeV, respectively) and FIG. 7D illustrates post-annealprofiles. As with FIG. 7B, the rapid thermal annealing step wasperformed at a temperature of about 1000° C. and a duration of about 30seconds. As illustrated by FIG. 7D, the arsenic profile decreasesmonotonically from a peak concentration level of 1×10¹⁹ cm⁻³ within theburied Si_(1-x)Ge_(x) layer to a minimum concentration level of 1×10¹⁷cm⁻³ at the surface of the substrate. Depending on the profile andconcentration of the phosphorus dopants in the silicon active layer, thecombined profile of the P and As dopants may also be retrograded acrossthe silicon active layer.

In the drawings and specification, there have been disclosed typicalpreferred embodiments of the invention and, although specific terms areemployed, they are used in a generic and descriptive sense only and notfor purposes of limitation, the scope of the invention being set forthin the following claims.

1. A method of forming a semiconductor substrate, comprising the stepsof: forming a handling substrate having a silicon layer therein and aSi_(1-x)Ge_(x) layer extending on the silicon layer; bonding asupporting substrate to the handing substrate so that the Si_(1-x)Ge_(x)layer is disposed between the supporting substrate and the siliconlayer; and removing a portion of the handling substrate from thesupporting substrate to expose the silicon layer and define asemiconductor-on-insulator substrate having a buried Si_(1-x)Ge_(x)layer therein.
 2. The method of claim 1, wherein the buriedSi_(1-x)Ge_(x) layer has a graded concentration of Ge therein thatdecreases in a direction from the supporting substrate to the siliconlayer; and wherein the silicon layer is an unstrained silicon layer. 3.The method of claim 1, wherein said step of forming a handling substratecomprises forming a handling substrate having a first silicon layertherein, a Si_(1-x)Ge_(x) layer extending on the first silicon layer anda second silicon layer extending on the Si_(1-x)Ge_(x) layer.
 4. Themethod of claim 3, wherein said bonding step is preceded by the step ofthermally oxidizing the second silicon layer to define a thermal oxidelayer; wherein the supporting substrate comprises an oxide surface layerthereon; and wherein said bonding step comprises bonding the oxidesurface layer to the thermal oxide layer.
 5. The method of claim 1,wherein said bonding step is preceded by the step of depositing anelectrically insulating layer on the Si_(1-x)Ge_(x) layer; wherein thesupporting substrate comprises an oxide surface layer thereon; andwherein said bonding step comprises bonding the oxide surface layer tothe electrically insulating layer.
 6. The method of claim 1, wherein thehandling substrate comprises a porous silicon layer therein; and whereinsaid removing step comprises removing a portion of the handlingsubstrate from the supporting substrate by splitting the porous siliconlayer.
 7. The method of claim 6, wherein said removing step comprisesplanarizing the porous silicon layer and the silicon layer in sequence.8. The method of claim 1, wherein the handling substrate comprises aporous silicon layer therein; and wherein said removing step comprisesplanarizing the porous silicon layer and the silicon layer in sequence.9. The method of claim 1, wherein said step of forming a handlingsubstrate comprises the steps of: epitaxially growing a Si_(1-x)Ge_(x)layer on the silicon layer; and implanting hydrogen ions through theSi_(1-x)Ge_(x) layer and the silicon layer to define a hydrogen implantlayer in the handling substrate.
 10. The method of claim 9, wherein saidremoving step comprises splitting the hydrogen implant layer.
 11. Themethod of claim 10, wherein said removing step comprises planarizing thehydrogen implant layer.
 12. The method of claim 2, wherein said step offorming a handling substrate comprises the steps of: epitaxially growinga Si_(1-x)Ge_(x) layer on the silicon layer; and implanting hydrogenions through the Si_(1-x)Ge_(x) layer and the silicon layer to define ahydrogen implant layer in the handling substrate.
 13. The method ofclaim 12, wherein said removing step comprises splitting the hydrogenimplant layer.
 14. The method of claim 13, wherein said removing stepcomprises planarizing the hydrogen implant layer.
 15. A method offorming a semiconductor substrate, comprising the steps of: forming ahandling substrate having an unstrained silicon layer therein and anepitaxial Si_(1-x)Ge_(x) layer having a graded concentration of Getherein extending on the unstrained silicon layer; bonding a supportingsubstrate to the handing substrate so that the Si_(1-x)Ge_(x) layer isdisposed between the supporting substrate and the unstrained siliconlayer; and removing a portion of the handling substrate from thesupporting substrate to expose the unstrained silicon layer and define asemiconductor-on-insulator substrate having a buried Si_(1-x)Ge_(x)layer therein.
 16. The method of claim 15, wherein said forming stepcomprises forming a handling substrate having an unstrained siliconlayer therein with a thickness greater than about 600 Å.
 17. The methodof claim 16, wherein the Si_(1-x)Ge_(x) layer has a thickness of lessthan about 800 Å.